Wednesday, July 31, 2013

1307.7758 (Vittorianna Tasco et al.)

Understanding Polarization Properties of InAs Quantum Dots by Atomistic
Modeling of Growth Dynamics

Vittorianna Tasco, Muhammad Usman, Maria Teresa Todaro, Milena De Giorgi, Adriana Passaseo
A model for realistic InAs quantum dot composition profile is proposed and analyzed, consisting of a double region scheme with an In-rich internal core and an In-poor external shell, in order to mimic the atomic scale phenomena such as In-Ga intermixing and In segregation during the growth and overgrowth with GaAs. The parameters of the proposed model are derived by reproducing the experimentally measured polarization data. Further understanding is developed by analyzing the strain fields which suggests that the two-composition model indeed results in lower strain energies than the commonly applied uniform composition model.
View original:

No comments:

Post a Comment