1306.0841 (J. Fujii et al.)

Identifying the electronic character and role of the Mn states in the
valence band of (Ga,Mn)As    [PDF]

J. Fujii, B. R. Salles, M. Sperl, S. Ueda, M. Kobata, K. Kobayashi, Y. Yamashita, P. Torelli, M. Utz, C. S. Fadley, A. X. Gray, J. Minar, J. Braun, H. Ebert, I. Di Marco, O. Eriksson, P. Thunström, G. H. Fecher, S. Ouardi, H. Stryhanyuk, E. Ikenaga, C. H. Back, G. van der Laan, G. Panaccione

We report high-resolution hard x-ray photoemission spectroscopy results on (Ga,Mn)As films as a function of Mn doping. Supported by theoretical calculations we identify, over the entire 1% to 13% Mn doping range, the electronic character of the states near the top of the valence band. Magnetization and temperature dependent core-level photoemission spectra reveal how the delocalized character of the Mn states enables the bulk ferromagnetic properties of (Ga,Mn)As.

View original: http://arxiv.org/abs/1306.0841