V. Gnezdilov, D. Wulferding, P. Lemmens, A. Möller, P. Recher, H. Berger, R. Sankar, F. C. Chou
In the giant Rashba, polar semiconductor BiTeI phonons as well as spin split bulk and surface states are probed using Raman scattering. The observed bulk states are in good agreement with symmetry considerations and photoemission data of spin splitting. A very large enhancement of the Raman scattering cross section is observed if the laser energy is tuned to interband transitions. This resonance allows to probe also surface scattering. The respective signal at low energies depends strongly on surface termination and surface potential shifts induced by the cleaving process. The resolved electronic scattering rate is not too different from a corresponding signal of surface states in the topological insulator Bi2Se3. In the latter materials Rashba split quantum well states are observed that are induced by band bending, leading to a surprising similarity of the two materials.
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http://arxiv.org/abs/1303.4333
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