1303.3884 (N. M. Litovchenko et al.)

Excitonic parameters of InxGa1-xAs-GaAs heterostructures with quantum
wells at low temperatures    [PDF]

N. M. Litovchenko, D. V. Korbutyak, O. M. Strilchuk

Characteristics of GaAs/In$_{x}$Ga$_{1-x}$As/GaAs heterostructures with a single quantum well, which were obtained at various growth parameters, are evaluated according to the results of measurements of low-temperature photoluminescence spectra and their corresponding theoretical analysis.

View original: http://arxiv.org/abs/1303.3884