Thibault J. -Y. Derrien, Tatiana E. Itina, Rémi Torres, Thierry Sarnet, Marc Sentis
The mechanisms of ripple formation on silicon surface by femtosecond laser pulses are investigated. We demonstrate the transient evolution of the density of the excited carriers and temperature evolution. As a result, the experimental conditions required for the excitation of surface plasmon polaritons are revealed. The periods of the resulting structures are then investigated as a function of laser parameters, such as the angle of incidence, laser fluence, and polarization. The obtained dependencies provide a way of better control over the properties of the periodic structures induced by femtosecond laser on the surface of a semiconductor material.
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http://arxiv.org/abs/1303.1203
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