Linggang Zhu, Graeme J. Ackland
We study the chemical nature of the bonding of an oxide layer to the parent metal. In order to disentangle chemical effects from strain/misfit, Ti(10$\bar{1}$0)/TiO$_{2}$(100) interface has been chosen. We use the density functional pseudopotential method which gives good agreement with experiment for known properties of bulk and surface Ti and TiO$_2$. Two geometries, a film-like model (with free surface in the structure) and a bulk-like model (with no free surface in the structure) are used to simulate the interface, in each case with different terminations of Ti and TiO$_2$. For the single-oxygen interfaces, the interface energy obtained using these two models agree with each other; however for the double-oxygen ones, the relative stability is quite different. The disturbance to the electronic structure is confined within a few atomic layers of the interface. The interfacial bonding is mainly ionic, and surprisingly there is more charge transfer from Ti to O in the interface than in the bulk. In consequence the Ti/TiO$_2$ interface has stronger binding than the bulk of either material. This helps to explain why the oxide forms a stable, protective layer on Ti and Ti alloys.
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http://arxiv.org/abs/1212.1659
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