1207.3512 (O. I. Velichko et al.)

Simulation of boron diffusion during low-temperature annealing of
implanted silicon    [PDF]

O. I. Velichko, A. P. Kavaliova

Modeling of ion-implanted boron redistribution in silicon crystals during low-temperature annealing with a small thermal budget has been carried out. It was shown that formation of "tails"' in the low-concentration region of impurity profiles occurs due to the long-range migration of boron interstitials

View original: http://arxiv.org/abs/1207.3512