Sunday, August 4, 2013

1308.0253 (Junjie He et al.)

Half-Semiconductor antiferromagnets and Spin-Gapless-Semiconductor

Junjie He, P. Zhou, N. Jiao, L. Z. Sun, Xiaoshuang Chen, Wei Lu
We propose a concept of half-semiconductor antiferromagnets in which fully spin-polarized valence and conduction bands belong to the same spin channel with completely compensated spontaneous magnetization. Using density functional theory plus Hubbard U (DFT+U) methods, we find a viable approach to achieve the half-semiconductor antiferromagnets through the transition metal (TM) Fe and Cr codoped boron nitride(BN) sheet. Moreover, spin gapless semiconductor antiferromagnets with zero magnetic moment are also achieved in such systems.
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