1308.0253 (Junjie He et al.)

Half-Semiconductor antiferromagnets and Spin-Gapless-Semiconductor
antiferromagnets    [PDF]

Junjie He, P. Zhou, N. Jiao, L. Z. Sun, Xiaoshuang Chen, Wei Lu

We propose a concept of half-semiconductor antiferromagnets in which fully spin-polarized valence and conduction bands belong to the same spin channel with completely compensated spontaneous magnetization. Using density functional theory plus Hubbard U (DFT+U) methods, we find a viable approach to achieve the half-semiconductor antiferromagnets through the transition metal (TM) Fe and Cr codoped boron nitride(BN) sheet. Moreover, spin gapless semiconductor antiferromagnets with zero magnetic moment are also achieved in such systems.

View original: http://arxiv.org/abs/1308.0253