Thursday, August 1, 2013

1307.8224 (Hyungyu Jin et al.)

Enhancement in the Figure of Merit of p-type BiSb alloys though multiple
valence-band doping

Hyungyu Jin, Christopher M. Jaworski, Joseph P. Heremans
N-type Bi100-xSbx alloys have the highest thermoelectric figure of merit (zT) of all materials below 200K; here we investigate how filling multiple valence band pockets at T and H-points of the Brillouin zone produces high zT in p-type Sn-doped material. This approach, theoretically predicted to potentially give zT>1 in Bi, was used successfully in PbTe. We report thermopower, electrical and thermal conductivity (2 to 400K) of single crystals with 12View original:

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