Thursday, June 27, 2013

1306.6258 (Max Suckert et al.)

Electrically Detected Double Electron-Electron Resonance: Exchange
Interaction of 31P Donors and Pb0 Defects at the Si/SiO2 Interface

Max Suckert, Felix Hoehne, Lukas Dreher, Markus Kuenzl, Hans Huebl, Martin Stutzmann, Martin S. Brandt
We study the coupling of Pb0 dangling bond defects at the Si/SiO2 interface and 31P donors in an epitaxial layer directly underneath using electrically detected double electron-electron resonance (EDDEER). An exponential decay of the EDDEER signal is observed, which is attributed to a broad distribution of exchange coupling strengths J/2pi from 25 kHz to 3 MHz. Comparison of the experimental data with a numerical simulation of the exchange coupling shows that this range of coupling strengths corresponds to 31P-Pb0 distances ranging from 14 nm to 20 nm.
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