Thursday, June 20, 2013

1306.4351 (M. Hosoda et al.)

Transistor operation and mobility enhancement in top-gated LaAlO_3 /
SrTiO_3 heterostructures

M. Hosoda, Y. Hikita, H. Y. Hwang, C. Bell
We report the operation of LaAlO_3 / SrTiO_3 depletion mode top-gated junction field-effect transistors using a range of LaAlO_3 thicknesses as the top gate insulator. Gated Hall bars show near ideal transistor characteristics at room temperature with on-off ratios greater than 1000. Lower temperature measurements demonstrate a systematic increase in the Hall mobility as the sheet carrier density in the channel is depleted via the top gate, providing a route to higher mobility, lower density electron gases in this system.
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