Wednesday, May 22, 2013

1305.4737 (I. Iezhokin et al.)

High sensitive quasi freestanding epitaxial graphene gassensor on 6H-SiC    [PDF]

I. Iezhokin, P. Offermans, S. H. Brongersma, A. J. M. Giesbers, C. F. J. Flipse
We have measured the electrical response to NO$_2$, N$_2$, NH$_3$ and CO for epitaxial graphene and quasi freestanding epitaxial graphene on 6H-SiC substrates. Quasi freestanding epitaxial graphene shows a 6 fold increase in NO2 sensitivity compared to epitaxial graphene. Both samples show a sensitivity better than the experimentally limited 1 ppb. The strong increase in sensitivity of quasi freestanding epitaxial graphene can be explained by a Fermi-energy close to the Dirac Point leading to a strongly surface doping dependent sample resistance. Both sensors show a negligible sensitivity to N$_2$, NH$_3$ and CO.
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