1303.3831 (Tobias Morf et al.)

X-ray induced trap states in the organic semiconductor Rubrene    [PDF]

Tobias Morf, Simon Haas, Tino Zimmerling, Bertram Batlogg

In view of applications in X-ray detectors and field-effect transistors it is important to enhance to understanding of formation and microscopic origin of localised states in organic semiconductors. In a controlled irradiation experiment, the formation of trap states in the prototypical organic semiconductor Rubrene is studied quantitatively for doses up to 82 Gy (=J/kg). About 100 electronic trap states, located around 0.3 eV above the valence band, are created by each absorbed photon, equivalent to 10^14 new states per Gray. Compared to ion irradiation, X-rays generate 100 to 1000 times more trap states per primary interaction event. Thermal annealing is shown to reduce these traps.

View original: http://arxiv.org/abs/1303.3831