1212.1847 (F. T. Vasko)

Resonant and non-dissipative tunneling in independently contacted
graphene structures    [PDF]

F. T. Vasko

The tunneling current between independently contacted graphene sheets separated by boron nitride insulator is calculated. Both dissipative tunneling transitions, with momentum transfer due to disorder scattering, and non-dissipative regime of tunneling, which appears due to intersection of electron and hole branches of energy spectrum, are described. Dependencies of tunneling current on concentrations in top and bottom graphene layers, which are governed by the voltages applied through independent contacts and gates, are considered for the back- and double-gated structures. Comparison with experimental data in back-gated structure is performed and conditions for resonant dissipative tunneling in double-gated structure are analyzed.

View original: http://arxiv.org/abs/1212.1847