1108.4978 (L. D. Alegria et al.)

Structural and Electrical Characterization of Bi2Se3 Nanostructures
Grown by Metalorganic Chemical Vapor Deposition    [PDF]

L. D. Alegria, M. D. Schroer, A. Chatterjee, G. R. Poirier, M. Pretko, S. K. Patel, J. R. Petta

We characterize nanostructures of Bi2Se3 that are grown via metalorganic chemical vapor deposition using the precursors diethyl selenium and trimethyl bismuth. By adjusting growth parameters, we obtain either single-crystalline ribbons up to 10 microns long or thin micron-sized platelets. Four-terminal resistance measurements yield a sample resistivity of 4 mOhm-cm. We observe weak anti-localization and extract a phase coherence length l_phi = 178 nm and spin-orbit length l_so = 93 nm at T = 0.29 K. Our results are consistent with previous measurements on exfoliated samples and samples grown via physical vapor deposition.

View original: http://arxiv.org/abs/1108.4978