1206.3810 (Sriram Krishnamoorthy et al.)

Efficient GaN tunnel junctions using embedded GdN nanoislands    [PDF]

Sriram Krishnamoorthy, Jing Yang, Pil Sung Park, Roberto Myers, Siddharth Rajan

Highly efficient inter-band tunneling in GaN using epitaxial GdN nanoislands embedded in a degenerately doped PN junction is reported. PN tunnel junctions oriented in both the Ga-polar and N-polar orientation had low resistance, indicating weak polarity dependence. The GaN/GdN/GaN tunnel junction was used to replace the p-contact in a pn junction diode, and a low tunneling specific resistivity of 2.7 X 10-3 {\Omega}-cm2 was measured. This is the lowest specific tunneling resistivity reported till date for GaN. The low tunneling resistance achieved using this approach could enable new designs for increased functionality and performance in wide band gap electronic and optoelectronic devices.

View original: http://arxiv.org/abs/1206.3810