Mario F. Borunda, H. Hennig, Eric J. Heller
We investigate the transport of electrons in disordered and clean graphene devices. We consider a geometry where the graphene flake is contacted by narrow metallic leads. Plotting the conductance as a function of the position of one of the leads, we can approximate the probability density function of the charge flow at the edge which is used to analyze the transport properties with increasing length of the device. Moreover, we simulate scanning probe microscopy (SPM) measurements for the same devices, which can be seen as a measure for the flow of charge inside the device, thus complementing the transport calculations. We compare our analysis to theory describing transport in clean and disordered systems.
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http://arxiv.org/abs/1204.3134
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