1204.0499 (Wan Sik Hwang et al.)

Transport Properties of Graphene Nanoribbon Transistors on Transport
Properties of Graphene Nanoribbon Transistors on Chemical-Vapor-Deposition
Grown Wafer-Scale Graphene    [PDF]

Wan Sik Hwang, Kristof Tahy, Xuesong Li, Huili, Xing, Alan C. Seabaugh, Chun-Yung Sung, Debdeep Jena

Graphene nanoribbon (GNR) field-effect transistors (FETs) with widths down to 12 nm have been fabricated by electron beam lithography using a wafer-scale chemical vapor deposition (CVD) process to form the graphene. The GNR FETs show drain-current modulation of approximately 10 at 300 K, increasing to nearly 106 at 4 K. The strong temperature dependence of the minimum current indicates the opening of a bandgap for CVD-grown GNR-FETs. The extracted bandgap is estimated to be around 0.1 eV by differential conductance methods. This work highlights the development of CVD-grown large-area graphene and demonstrates the opening of a bandgap in nanoribbon transistors.

View original: http://arxiv.org/abs/1204.0499