1204.0474 (Wan Sik Hwang et al.)

Transistors with Chemically Synthesized Layered Semiconductor WS2
Exhibiting 105 Room Temperature Modulation and Ambipolar Behavior    [PDF]

Wan Sik Hwang, Maja Remskar, Rusen Yan, Vladimir Protasenko, Kristof Tahy, Soo Doo Chae, Pei Zhao, Aniruddha Konar, Huili, Xing, Alan Seabaugh, Debdeep Jena

We report the realization of field-effect transistors (FETs) made with chemically- synthesized layered two dimensional (2D) crystal semiconductor WS2. The 2D Schottky-barrier FETs demonstrate ambipolar behavior and a high (~105x) on/off current ratio at room temperature with current saturation. The behavior is attributed to the presence of an energy bandgap in the 2D crystal material. The FETs show clear photo response to visible light. The promising electronic and optical characteristics of the devices combined with the layered 2D crystal flexibility make WS2 attractive for future electronic and optical devices.

View original: http://arxiv.org/abs/1204.0474