Jing-Kai Huang, Jiang Pu, Chih-Piao Chuu, Chang-Lung Hsu, Ming-Hui Chiu, Zhen-Yu Juang, Yong-Huang Chang, Wen-Hao Chang, Yoshihiro Iwasa, Mei-Ying Chou, Taishi Takenobu, Lain-Jong Li
The monolayer transition metal dichalcogenides have recently attracted much attention owing to their potential in valleytronics, flexible and low-power electronics and optoelectronic devices. Recent reports have demonstrated the growth of large-size 2-dimensional MoS2 layers by the sulfurization of molybdenum oxides. However, the growth of transition metal selenide monolayer has still been a challenge. Here we report that the introduction of hydrogen in the reaction chamber helps to activate the selenization of WO3, where large-size WSe2 monolayer flakes or thin films can be successfully grown. The top-gated field-effect transistors based on WSe2 monolayers using ionic gels as the dielectrics exhibit ambipolar characteristics, where the hole and electron mobility values are up to 90 and 7 cm2/Vs respectively. The resistor-loaded inverter based on a WSe2 film, with a gain ~13, further demonstrates its applicability for logic-circuit integrations.
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http://arxiv.org/abs/1304.7365
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