1304.2853 (Yangyang Wang et al.)

Half-Metallic Silicene and Germanene Nanoribbons: towards
High-Performance Spintronics Device    [PDF]

Yangyang Wang, Jiaxin Zheng, Zeyuan Ni, Ruixiang Fei, Qihang Liu, Ruge Quhe, Chengyong Xu, Jing Zhou, Zhengxiang Gao, Jing Lu

By using first-principles calculations, we predict that an in-plane homogenous electrical field can induce half-metallicity in hydrogen-terminated zigzag silicene and germanene nanoribbons (ZSiNRs and ZGeNRs). A dual-gated finite ZSiNR device reveals a nearly perfect spin-filter efficiency of up to 99% while a quadruple-gated finite ZSiNR device serves as an effective spin field effect transistor (FET) with an on/off current ratio of over 100 from ab initio quantum transport simulation. This discovery opens up novel prospect of silicene and germanene in spintronics.

View original: http://arxiv.org/abs/1304.2853