Band offset of GaAs/AlxGa1-xAs heterojunctions from atomistic first
principles [PDF]
Yin Wang, Ferdows Zahid, Yu Zhu, Lei Liu, Jian Wang, Hong GuoUsing an atomistic first principles approach, we investigate the band offset of the GaAs/AlxGa1-xAs heterojunctions for the entire range of the Al doping concentration 0View original: http://arxiv.org/abs/1304.1686
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