1303.0086 (Wei Wu et al.)

High mobility and high on/off ratio field-effect transistors based on
chemical vapor deposited single-crystal MoS2 grains    [PDF]

Wei Wu, Debtanu De, Su-Chi Chang, Yanan Wang, Haibing Peng, Jiming Bao, Shin-Shem Pei

We report field-effect transistors (FETs) with single-crystal molybdenum disulfide (MoS2) channels synthesized by chemical vapor deposition (CVD). For a bilayer MoS2 FET, the mobility is ~17 cm2V-1s-1 and the on/off current ratio is ~108, which are much higher than those of FETs based on CVD polycrystalline MoS2 films. By avoiding the detrimental effects of the grain boundaries and the contamination introduced by the transfer process, the quality of the CVD MoS2 atomic layers deposited directly on SiO2 is comparable to the best exfoliated MoS2 flakes. It shows that CVD is a viable method to synthesize high quality MoS2 atomic layers.

View original: http://arxiv.org/abs/1303.0086