Hui Yan, Cheng-Cheng Liu, Ke-Ke Bai, Xuejiao Wang, Mengxi Liu, Wei Yan, Lan Meng, Yanfeng Zhang, Zhongfan Liu, Jia-Cai Nie, Yugui Yao, Lin He
Here we report a facile method to generate a high density of point defects in graphene on metal foil and show how the point defects affect the electronic structures of graphene layers. Our scanning tunneling microscopy (STM) measurements, complemented by first principle calculations, reveal that the point defects result in both the intervalley and intravalley scattering of graphene. The Fermi velocity is reduced in the vicinity area of the defect due to the enhanced scattering. Additionally, our analysis further points out that periodic point defects can tailor the electronic properties of graphene by introducing a significant bandgap, which opens an avenue towards all-graphene electronics.
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http://arxiv.org/abs/1302.4807
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