Monday, February 11, 2013

1302.2110 (Yuxue Cai et al.)

Fully sealed metal nanoparticle film based field-effect transistor    [PDF]

Yuxue Cai, Jan Michels, Julien Bachmann, Christian Klinke
Devices comprising one or a few small conductive islands show a rich spectrum of electrical behavior attributed to the effect of Coulomb blockade. We demonstrate that in extended, monolayered films assembled from individual, monodisperse metal nanoparticles current oscillations can be observed using a local top gate realizing transistor function. A property analogous to the bandgap of semiconductors is attained in this metal-based system by the Coulomb energy gap which is tunable via the nanoparticle size. These metal nanoparticle field-effect transistors are easy to prepare and stable for months due to a protecting oxide layer.
View original: http://arxiv.org/abs/1302.2110

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