1301.7010 (K. V. Chizh et al.)

Metal silicide/poly-Si Schottky diodes for uncooled microbolometers    [PDF]

K. V. Chizh, V. A. Chapnin, V. P. Kalinushkin, V. Ya. Resnik, M. S. Storozhevykh, V. A. Yuryev

Nickel silicide Schottky diodes formed on polycrystalline Si

films are proposed as temperature sensors of monolithic uncooled microbolometer IR focal plane arrays. Structure and composition of nickel silicide/polycrystalline silicon films synthesized in a low-temperature process are examined by transmission electron microscopy. The Ni silicide has been identified as two-phase compound with the volume fraction of Ni_2Si:NiSi>~4:1. Two potential barriers (~0.74 and ~0.51 meV) are registered by photo-emf spectroscopy at 80K and attributed to Ni/Si and Ni-silicide/Si interfaces. I-V characteristics of the diodes studied at different temperatures demonstrate temperature coefficients of voltage and current to vary in absolute value from 0.3 to 0.6%/K for forward biased structures and around 2.5%/K for reverse biased ones.

View original: http://arxiv.org/abs/1301.7010