Carrier localization and out of plane anisotropic magnetoresistance in
$Nd_{0.55-x} Sm_x Sr_{0.45} Mn O_3$ thin films [PDF]
M. K. Srivastava, A. Kaur, H. K. SinghThe impact of carrier localization on the anisotropic magnetoresistance (AMR) has been investigated in NSSMO thin films. Carrier localization is caused by the reduced average radius of the A-site of the perovskite lattice and enhanced size disorder due to substitution of smaller cations for larger.View original: http://arxiv.org/abs/1301.4043
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