Wednesday, January 9, 2013

1109.3638 (Z. -H. Pan et al.)

Measurement of an Exceptionally Weak Electron-Phonon Coupling on the
Surface of the Topological Insulator Bi$_2$Se$_3$ Using Angle-Resolved
Photoemission Spectroscopy
   [PDF]

Z. -H. Pan, A. V. Fedorov, D. Gardner, Y. S. Lee, S. Chu, T. Valla
Gapless surface states on topological insulators are protected from elastic scattering on non-magnetic impurities which makes them promising candidates for low-power electronic applications. However, for wide-spread applications, these states should have to remain coherent at ambient temperatures. Here, we studied temperature dependence of the electronic structure and the scattering rates on the surface of a model topological insulator, Bi$_2$Se$_3$, by high resolution angle-resolved photoemission spectroscopy. We found an extremely weak broadening of the topological surface state with temperature and no anomalies in the state's dispersion, indicating exceptionally weak electron-phonon coupling. Our results demonstrate that the topological surface state is protected not only from elastic scattering on impurities, but also from scattering on low-energy phonons, suggesting that topological insulators could serve as a basis for room temperature electronic devices.
View original: http://arxiv.org/abs/1109.3638

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