Tuesday, November 20, 2012

1211.4051 (M. Dobrowolska et al.)

Response to the comment of K.W. Edmonds et al. on the article
'Controlling the Curie temperature in (Ga,Mn)As through location of the Fermi
level within the impurity band'
   [PDF]

M. Dobrowolska, X. Liu, J. K. Furdyna, M. Berciu, K. M. Yu, W. Walukiewicz
Although we seriously disagree with many of the points raised in the comment by Edmonds et al., we feel that it is valuable and timely, since comparison of this comment and our paper serves to underscore an important property of the ferromagnetic semiconductor (Ga,Mn)As in thin film form.
View original: http://arxiv.org/abs/1211.4051

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