Monday, November 19, 2012

1211.3807 (Kalon Gopinadhan et al.)

Universal scaling of resistivity in bilayer graphene    [PDF]

Kalon Gopinadhan, Young Jun Shin, Hyunsoo Yang
We report the temperature dependent electrical transport properties of gated bilayer graphene devices. We see a clear evidence of insulating behavior due to electron-hole charge puddles. The electrical resistivity increases while the mobility decreases with decreasing temperature, a characteristic due to carrier inhomogeneity in graphene. The theoretical fittings using an empirical formula of single electron tunneling indicate that electrical resistivity follows a universal curve with a scaling parameter. The scaling parameter is determined to be a measure of the fluctuations in the electron-hole puddle distribution.
View original: http://arxiv.org/abs/1211.3807

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