Sam Vaziri, Grzegorz Lupina, Christoph Henkel, Anderson D. Smith, Mikael Östling, Jarek Dabrowski, Gunther Lippert, Wolfgang Mehr, Max C. Lemme
Graphene has been investigated intensely as a next-generation electronic material since the presence of the field effect was reported in 2004. The absence of a band gap and the resulting high off-state leakage currents prohibit graphene as the channel material in field effect transistors (FETs) for logic applications. While graphene RF analog transistors can exploit the higher carrier mobility and saturation velocity, band-to-band tunneling reduces drain current saturation and voltage gain. Recently, we conceptually proposed a graphene-based hot electron transistor (HET) that can potentially deliver superior DC and RF performance. Here, we experimentally demonstrate DC functionality of such a graphene-based HET. The proposed fabrication scheme is compatible with silicon technology and can be carried out at the wafer scale with standard silicon technology. The state of the GBT can be switched by a potential applied to the transistors base, which is made of graphene. Transfer characteristics of the GBTs show ON/OFF current ratios approaching 10e5.
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http://arxiv.org/abs/1211.2949
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