Sunil K. Karna, Yogesh. K. Vohra, Samuel T. Weir
A homoepitaxial boron-doped single crystal diamond films were grown on synthetic (100) type Ib diamond substrates using a microwave plasma assisted chemical vapor deposition. Raman characterization showed a few additional bands at the lower wavenumber regions along with the zone center optical phonon mode for diamond. The shape modification of the zone center optical phonon line and its downshift were observed with the increasing boron content in the film. A modification in surface morphology of the film with increasing boron content has been observed by atomic force microscopy. Step bunching was appeared on the surface of highly doped film. The difference in activation energy of the carriers indicates two different conduction mechanisms were responsible for the semiconducting behavior of the film.
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http://arxiv.org/abs/1210.7846
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