Impurity impact ionization avalanche in p-type diamond [PDF]
Vincent Mortet, A. SoltaniElectrical conductivity of a highly boron doped chemical vapor deposited diamond thin film has been studied at different temperatures under high electric field conditions. Current-voltage characteristics have been measured using pulsed technique to reduce thermal effects. Experimental results evidence deep impurity impact ionization avalanche in p-type diamond up to room temperature.View original: http://arxiv.org/abs/1210.0993
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