1109.2927 (Christophe Krzeminski et al.)

Optimisation and Simulation of an Alternative nano-flash Memory: the
SASEM device    [PDF]

Christophe Krzeminski, Emmanuel Dubois, Xiaohui Tang, Nicolas Reckinger, André Crahay, Vincent Bayot

Process simulation are performed in order to simulate the full fabrication process of an alternative nano-flash memory in order to optimise it and to improve the understanding of the dot storage formation. The influence of various parameters (oxidation temperature, nanowire shape) have been investigated.

View original: http://arxiv.org/abs/1109.2927