Monday, September 3, 2012

1111.5800 (G. A. H. Schober et al.)

Mechanisms of enhanced orbital dia- and paramagnetism: Application to
the Rashba semiconductor BiTeI
   [PDF]

G. A. H. Schober, H. Murakawa, M. S. Bahramy, R. Arita, Y. Kaneko, Y. Tokura, N. Nagaosa
We study the magnetic susceptibility of a layered semiconductor BiTeI with giant Rashba spin splitting both theoretically and experimentally to explore its orbital magnetism. Apart from the core contributions, a large temperature-dependent diamagnetic susceptibility is observed when the Fermi energy E_F is near the crossing point of the conduction bands, while the susceptibility turns to be paramagnetic when E_F is away from it. These features are consistent with first-principles calculations, which also predict an enhanced orbital magnetic susceptibility with both positive and negative signs as a function of E_F due to band (anti)crossings. Based on these observations, we propose two mechanisms for an enhanced paramagnetic orbital susceptibility.
View original: http://arxiv.org/abs/1111.5800

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