Tuesday, August 28, 2012

1208.5336 (Dominik Stöffler et al.)

STM-induced surface aggregates on metals and oxidized silicon    [PDF]

Dominik Stöffler, Hilbert von Löhneysen, Regina Hoffmann
We have observed an aggregation of carbon or carbon derivatives on platinum and natively oxidized silicon surfaces during STM measurements in ultra-high vacuum on solvent-cleaned samples previously structured by e-beam lithography. We have imaged the aggregated layer with scanning tunneling microscopy (STM) as well as scanning electron microscopy (SEM). The amount of the aggregated material increases with the number of STM scans and with the tunneling voltage. Film thicknesses of up to 10 nm with five successive STM measurements have been obtained.
View original: http://arxiv.org/abs/1208.5336

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