Monday, August 20, 2012

1208.3525 (Ajeesh M. Sahadevan et al.)

Biaxial strain effect of spin dependent tunneling in MgO magnetic tunnel
junctions
   [PDF]

Ajeesh M. Sahadevan, Ravi K. Tiwari, Gopinadhan Kalon, Charanjit S. Bhatia, Mark Saeys, Hyunsoo Yang
We study the effect of strain on magnetic tunnel junctions (MTJ) induced by a diamond like carbon (DLC) film. The junction resistance as well as the tunnel magnetoresistance (TMR) reduces with the DLC film. Non-equilibrium Green's function quantum transport calculations show that the application of biaxial strain increases the conductance for both the parallel and anti-parallel configurations. However, the conductance for the minority channel and for the anti-parallel configuration is significantly more sensitive to strain, which drastically increases transmission through a MgO tunnel barrier, therefore, the TMR ratio decreases with biaxial strain.
View original: http://arxiv.org/abs/1208.3525

No comments:

Post a Comment