P. K. Rout, Himanshu Pandey, Anupam, P. C. Joshi, Z. Hossain, R. C. Budhani
We report remarkably low residual resistivity, giant residual resistivity ratio, free-electron-like Hall resistivity and high mobility ($\approx$ 10$^4$ cm$^2$V$^{-1}$s$^{-1}$) charge transport in epitaxial films of Co$_2$MnSi and Co$_2$FeSi grown on (001) SrTiO$_3$. This unusual behavior is not observed in films deposited on other cubic oxide substrates of comparable lattice parameters. The resistivity and Hall measurements on the films of various thickness clearly show that the extraordinary transport is attributable to a highly conducting interfacial layer. We draw a parallel between our results and the behavior of recently discovered two dimensional electron gas (2DEG) at LaAlO$_3$/SrTiO$_3$ interface. The strong magnetic character of the Heusler alloys combined with their metallicity add a new dimension to 2DEG problem and makes it potentially important for spintronics applications.
View original:
http://arxiv.org/abs/1208.3099
No comments:
Post a Comment