Feng Li, Laurent Orosz, Olfa Kamoun, Sophie Bouchoule, Christelle Brimont, Pierre Disseix, Thierry Guillet, Xavier Lafosse, Mathieu Leroux, Joel Leymarie, Meletis Mexis, Martine Mihailovic, François Réveret, Dmitry Solnyshkov, Jesus Zuniga-Perez, Guillaume Malpuech
A laser threshold is determined by the gain condition, which has been progressively reduced by the use of heterostructures and of quantum confinement. The polariton laser is the ultimate step of this evolution: coherent emission is obtained from the spontaneous decay of an exciton-polariton condensate, without the achievement of any gain condition. ZnO, with its unique excitonic properties, is the best choice for a blue/UV-emitting polariton laser device. We report on the fabrication of a new family of fully hybrid microcavities that combine the best-quality ZnO material available (bulk substrate) and two dielectric distributed Bragg reflectors, demonstrating large quality factors (>2500) and Rabi splittings (~200 meV). Low threshold polariton lasing is achieved between 4 and 300 K and for excitonic fractions ranging between 12% and 96 %. A phase diagram highlighting the role of LO phonon-assisted relaxation in this polar semiconductor is established, and a remarkable switching between polariton modes is demonstrated.
View original:
http://arxiv.org/abs/1207.7172
No comments:
Post a Comment