Ather Mahmood, Cecile Naud, Clement Bouvier, Fanny Hiebel, Pierre Mallet, Jean-Yves Veuillen, Laurent Levy, Didier Chaussende, Thierry Ouisse
We show how the weak field magneto-conductance can be used as a tool to characterize epitaxial graphene samples grown from the C or the Si face of Silicon Carbide, with mobilities ranging from 120 to 12000 cm$^2$/(V.s). Depending on the growth conditions, we observe anti-localization and/or localization which can be understood in term of weak-localization related to quantum interferences. The inferred characteristic diffusion lengths are in agreement with the scanning tunneling microscopy. Finally a graphical representation of the pseudospin diffusion illustrates the observed transition from localization to antilocalization.
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http://arxiv.org/abs/1206.1710
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