1206.1283 (M. Rebello Sousa Dias et al.)

Tuning hole mobility in InP nanowires    [PDF]

M. Rebello Sousa Dias, A. Picinin, V. Lopez-Richard, S. E. Ulloa, L. K. Castelano, J. P. Rino, G. E. Marques

Transport properties of holes in InP nanowires were calculated considering electron-phonon interaction via deformation potentials, the effect of temperature and strain fields. Using molecular dynamics, we simulate nanowire structures, LO-phonon energy renormalization and lifetime. The valence band ground state changes between light- and heavy-hole character, as the strain fields and the nanowire size are changed. Drastic changes in the mobility arise with the onset of resonance between the LO-phonons and the separation between valence subbands.

View original: http://arxiv.org/abs/1206.1283