Gerd Kunert, Sylvia Dobkowska, Tian Li, Helfried Reuther, Carsten Kruse, Stephan Figge, Rafal Jakiela, Alberta Bonanni, Jörg Grenzer, Wiktor Stefanowicz, Maciej Sawicki, Tomasz Dietl, Detlef Hommel
We report on the fabrication of pseudomorphic wurtzite GaMnN grown on GaN with Mn concentrations up to 10% using molecular beam epitaxy. According to Rutherford backscattering the Mn ions are mainly at the Ga-substitutional positions, and they are homogeneously distributed according to depth-resolved Auger-electron spectroscopy and secondary-ion mass-spectroscopy measurements. A random Mn distribution is indicated by transmission electron microscopy, no Mn-rich clusters are present for optimized growth conditions. A linear increase of the c-lattice parameter with increasing Mn concentration is found using x-ray diffraction. The ferromagnetic behavior is confirmed by superconducting quantum-interference measurements showing saturation magnetizations of up to 150 emu/cm^3.
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http://arxiv.org/abs/1205.3475
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