J. Guyonnet, E. Agoritsas, S. Bustingorry, T. Giamarchi, P. Paruch
Using multiscaling analysis, we compare the characteristic roughening of ferroelectric domain walls in PZT thin films with numerical one-dimensional interfaces in random bond disorder. We demonstrate that the ferroelectric domain walls are globally multi-affine, but composed of mono-affine segments up to a length scale greater or equal to 5 microns, separated by strong, highly localized variations in the disorder potential. We relate these variations to the possible strong pinning or out-of-equilibrium effects of dislocation defects present in the substrate. The mono-affine segments behave as one-dimensional interfaces weakly pinned in random bond disorder (with a roughness exponent of 0.58).
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http://arxiv.org/abs/1205.0155
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