Thursday, April 12, 2012

1204.2443 (Jorge M. Garcia et al.)

Graphene growth on h-BN by Molecular Beam Epitaxy    [PDF]

Jorge M. Garcia, Ulrich Wurstbauer, Antonio Levy, Loren N. Pfeiffer, Aron Pinczuk, Annette S. Plaut, Lei Wang, Cory R. Dean, Roberto Buizza, Arend M. Van Der Zande, James Hone, Kenji Watanabe, Takashi Taniguchi
The growth of single layer graphene nanometer size domains by solid carbon source molecular beam epitaxy on hexagonal boron nitride (h-BN) flakes is demonstrated. Formation of single-layer graphene is clearly apparent in Raman spectra which display sharp optical phonon bands. Atomic-force microscope images and Raman maps reveal that the graphene grown depends on the surface morphology of the h-BN substrates. The growth is governed by the high mobility of the carbon atoms on the h-BN surface, in a manner that is consistent with van der Waals epitaxy. The successful growth of graphene layers depends on the substrate temperature, but is independent of the incident flux of carbon atoms.
View original: http://arxiv.org/abs/1204.2443

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