Tuesday, April 10, 2012

1204.1665 (Jiangjiang J. Gu et al.)

Size-dependent Transport Study of In0.53Ga0.47As Gate-all-around
Nanowire MOSFETs: Impact of Quantum Confinement and Volume Inversion
   [PDF]

Jiangjiang J. Gu, Heng Wu, Yiqun Liu, Adam T. Neal, Roy G. Gordon, Peide D. Ye
InGaAs gate-all-around nanowire MOSFETs with channel length down to 50nm have been experimentally demonstrated by top-down approach. The nanowire size-dependent transport properties have been systematically investigated. It is found that reducing nanowire dimension leads to higher on-current, transconductance and effective mobility due to stronger quantum confinement and the volume inversion effect. TCAD quantum mechanical simulation has been carried out to study the inversion charge distribution inside the nanowires. Volume inversion effect appears at a larger dimension for InGaAs nanowire MOSFET than its Si counterpart.
View original: http://arxiv.org/abs/1204.1665

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