1203.4406 (Dieter Weber et al.)

Non-volatile gated variable resistor based on doped La_{2}CuO_{4} and
SrTiO_{3} heterostructures    [PDF]

Dieter Weber, Ulrich Poppe

Gated variable resistors were manufactured by depositing epitaxial heterostructures of doped La_{2}CuO_{4} and SrTiO_{3} layers. Their conductance change as function of write current I and write time t followed a simple empirical law of the form {\Delta}G/G = CI^A t^B. This behavior is in agreement with ionic transport that accelerates exponentially with electrical field strength.

View original: http://arxiv.org/abs/1203.4406