Wolfgang Mehr, J. Christoph Scheytt, Jarek Dabrowski, Gunther Lippert, Ya-Hong Xie, Max C. Lemme, Mikael Ostling, Grzegorz Lupina
We present a novel, graphene-based device concept for high-frequency operation: a hot electron graphene base transistor (GBT). Simulations show that GBTs have high current on/off ratios and high current gain. Simulations and small-signal models indicate that it potentially allows THz operation. Based on energy band considerations we propose a specific materials solution that is compatible with SiGe process lines.
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http://arxiv.org/abs/1112.4520
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