Keng-Ku Liu, Wenjing Zhang, Yi-Hsien Lee, Yu-Chuan Lin, Mu-Tung Chang, Ching-Yuan Su, Chia-Seng Chang, Hai Li, Yumeng Shi, Hua Zhang, Chao-Sung Lai, Lain-Jong Li
The two-dimensional layer of molybdenum disulfide (MoS2) has recently
attracted much interest due to its direct-gap property and potential
applications in optoelectronics and energy harvesting. However, the synthetic
approach to obtain high quality and large-area MoS2 atomic thin layers is still
rare. Here we report that the high temperature annealing of a thermally
decomposed ammonium thiomolybdate layer in the presence of sulfur can produce
large-area MoS2 thin layers with superior electrical performance on insulating
substrates. Spectroscopic and microscopic results reveal that the synthesized
MoS2 sheets are highly crystalline. The electron mobility of the bottom-gate
transistor devices made of the synthesized MoS2 layer is comparable with those
of the micromechanically exfoliated thin sheets from MoS2 crystals. This
synthetic approach is simple, scalable and applicable to other transition metal
dichalcogenides. Meanwhile, the obtained MoS2 films are transferable to
arbitrary substrates, providing great opportunities to make layered composites
by stacking various atomically thin layers.
View original:
http://arxiv.org/abs/1202.5354
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