1202.1560 (C. D. Weis et al.)

Electrical activation and electron spin resonance measurements of
implanted bismuth in isotopically enriched silicon-28    [PDF]

C. D. Weis, C. C. Lo, V. Lang, A. M. Tyryshkin, R. E. George, K. M. Yu, J. Bokor, S. A. Lyon, J. J. L. Morton, T. Schenkel

We have performed continuous wave and pulsed electron spin resonance
measurements of implanted bismuth donors in isotopically enriched silicon-28.
Donors are electrically activated via thermal annealing with minimal diffusion.
Damage from bismuth ion implantation is repaired during thermal annealing as
evidenced by narrow spin resonance linewidths (B_pp=12uT and long spin
coherence times T_2=0.7ms, at temperature T=8K). The results qualify ion
implanted bismuth as a promising candidate for spin qubit integration in
silicon.

View original: http://arxiv.org/abs/1202.1560