1201.5953 (B. Förg et al.)

Field-Effect Devices Utilizing LaAlO$_3$-SrTiO$_3$ Interfaces    [PDF]

B. Förg, C. Richter, J. Mannhart

Using LaAlO$_3$-SrTiO$_3$ bilayers, we have fabricated field-effect devices
that utilize the two-dimensional electron liquid generated at the bilayers'
{\textit n}-type interfaces as drain-source channels and the LaAlO$_3$ layers
as gate dielectrics. With gate voltages well below 1\,V, the devices are
characterized by voltage gain and current gain. The devices were operated at
temperatures up to 100\,{\deg}C.

View original: http://arxiv.org/abs/1201.5953